Today I read a paper titled “Non-volatile Complementary Resistive Switch-based Content Addressable Memory”
The abstract is:
This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs)
The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application